Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-08-09
2005-08-09
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S355000, C257S665000
Reexamination Certificate
active
06927472
ABSTRACT:
A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse element connected to the electrodes, and an interface wall. The fuse element is positioned external to the insulator, with a gap juxtaposed between the insulator and the fuse element. The interface wall further comprises a first side wall, a second side wall, and an inner wall, wherein the inner wall is disposed within the gap. The fuse electrodes are diametrically opposed to one another, and the fuse element is perpendicularly disposed above the fuse electrodes. The fuse element is either electroplatted, electroless plated, or is an ultra thin fuse.
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Anderson David K.
Cheng Tien-Jen
Dalton Timothy J.
Jahnes Christopher V.
Lu Andrew
Blecker, Esq. Ira D.
Flynn Nathan J.
International Business Machines - Corporation
McGinn & Gibb PLLC
Sefer Ahmed N.
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