Fuse circuit and semiconductor memory device including the same

Details Fuse circuit and semiconductor memory device including the same Fuse circuit and semiconductor memory device including the same

2011-07-12

2011-07-12

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S225700, C365S189070, C365S189050

Reexamination Certificate

active

07978549

ABSTRACT:
The fuse circuit includes a first program unit, a second program unit and a sensing circuit. The first and second program units are programmed simultaneously. The first program unit is programmed in a program mode in response to a fuse program signal and outputs a first signal in a sensing mode, such that the first signal increases when the first program unit is programmed. The second program unit is programmed in the program mode in response to the program signal and outputs a second signal in the sensing mode, such that the second signal decreases when the second program unit is programmed. The sensing circuit generates a sensing output signal in response to the first and second signals, such that the sensing output signal indicates whether or not the program units are programmed.

REFERENCES:
patent: 6735108 (2004-05-01), Kurth et al.
patent: 7193908 (2007-03-01), Kawasaki et al.
patent: 7215177 (2007-05-01), Sueoka
patent: 7317651 (2008-01-01), Kim et al.
patent: 2003/0133340 (2003-07-01), Lee
patent: 2004/0208050 (2004-10-01), Kurth et al.
patent: 2007/0189053 (2007-08-01), Pellizzer et al.
patent: 2006-059429 (2006-03-01), None
patent: 2006-197124 (2006-07-01), None
patent: 10-0687042 (2007-02-01), None

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