Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-10-11
2005-10-11
Wilson, Christian (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S761000, C257S347000
Reexamination Certificate
active
06953754
ABSTRACT:
The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.
REFERENCES:
patent: 5646432 (1997-07-01), Iwaki et al.
patent: 5811348 (1998-09-01), Matsushita
patent: 6570223 (2003-05-01), Machida et al.
patent: 6661027 (2003-12-01), Machida et al.
patent: 6716664 (2004-04-01), Machida et al.
patent: 2001/0015256 (2001-08-01), Yamazaki et al.
patent: 04-33327 (1992-02-01), None
patent: 05-152204 (1993-06-01), None
patent: 08-186267 (1996-07-01), None
patent: 10-150200 (1998-06-01), None
patent: 11-163363 (1999-06-01), None
patent: 2001-196597 (2001-07-01), None
Gosain Dharam Pal
Machida Akio
Usui Setsuo
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Wilson Christian
LandOfFree
Functional device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Functional device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Functional device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3440315