Fully planarized dual damascene metallization using copper...

Details Fully planarized dual damascene metallization using copper... Fully planarized dual damascene metallization using copper...

2006-09-26

2006-09-26

Graybill, David E. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S675000, C438S687000, C438S688000, C438S692000, C257SE21579

Reexamination Certificate

active

07112528

ABSTRACT:
The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates selective chemical vapor deposition aluminum (CVD Al) via fill with a metal wire, preferably copper, formed within a barrier layer. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.

REFERENCES:
patent: 4920072 (1990-04-01), Keller et al.
patent: 4920073 (1990-04-01), Wei et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 4994410 (1991-02-01), Sun et al.
patent: 5010032 (1991-04-01), Tang et al.
patent: 5081064 (1992-01-01), Inoue et al.
patent: 5091339 (1992-02-01), Carey
patent: 5147819 (1992-09-01), Yu et al.
patent: 5250465 (1993-10-01), Iizuka et al.
patent: 5250467 (1993-10-01), Somekh et al.
patent: 5292558 (1994-03-01), Heller et al.
patent: 5354712 (1994-10-01), Ho et al.
patent: 5384284 (1995-01-01), Doan et al.
patent: 5439731 (1995-08-01), Li et al.
patent: 5462890 (1995-10-01), Hwang et al.
patent: 5480836 (1996-01-01), Harada et al.
patent: 5514425 (1996-05-01), Ito et al.
patent: 5529953 (1996-06-01), Shoda
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5585673 (1996-12-01), Joshi et al.
patent: 5633199 (1997-05-01), Fiordalice et al.
patent: 5783485 (1998-07-01), Ong et al.
patent: 5877087 (1999-03-01), Mosely et al.
patent: 5897369 (1999-04-01), Jun
patent: 5989633 (1999-11-01), Hoinkis
patent: 6066358 (2000-05-01), Guo et al.
patent: 6077571 (2000-06-01), Kaloyeros et al.
patent: 6077781 (2000-06-01), Guo et al.
patent: 6090699 (2000-07-01), Aoyama et al.
patent: 6120844 (2000-09-01), Chen et al.
patent: 6217721 (2001-04-01), Xu et al.
patent: 6333265 (2001-12-01), Dixit et al.
patent: 6355560 (2002-03-01), Mosely et al.
patent: 3743591 (1988-07-01), None
patent: 0435388 (1989-12-01), None
patent: 0435388 (1991-07-01), None
patent: 0558004 (1993-09-01), None
patent: 0558004 (1993-09-01), None
patent: 0747947 (1996-12-01), None
patent: 63-9925 (1988-01-01), None
patent: 2513900 (1996-07-01), None
patent: WO 96/12297 (1996-04-01), None
K. Mikagi, H. Ishikawa, T. Usami, M. Suzuki, K. Inoue, N. Oda, S. Chikaki, I. Sakai and T. Kikkawa. “Barrier Metal Free Copper Damascene Interconnection Technology Using Atmospheric Copper Reflow and Nitrogen Doping in SiOF Film.” 1996 IEEE. pp. 365-368.
Electromigration Failure Distributions for Multi-Large Interconnects as a Function of Line Width: Experiments and Simulation, D.D. Brown, J.E. Sanchez. Jr., V. Pham, P.R. Besser, M.A. Korhonen, and C.Y. Li, Mat. Res. Soc. Symp. vol. 427, date not available.
Tsubouchi, K., et al., “Complete planarization of via holes with aluminum by selective and non-selective chemical vapor deposition,” Applied Physics Letters, vol. 57, No. 12, 1990, pp. 1221-1223.
European Search Report dated Sep. 8, 1999.
Search Report dated May 18, 1999.
Notice to file a Response dated Sep. 17, 2004 from the Korean Intellectual Property Office for South Korean Patent Application No. 1997-77841. (AMAT/1451KOR).

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