Fully isolated high-voltage MOS device

Details Fully isolated high-voltage MOS device Fully isolated high-voltage MOS device

2007-07-03

2010-11-30

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S337000, C257S347000, C257S355000, C257S369000, C257S407000, C257SE21375, C257SE21696, C257SE27063, C257SE27069, C257SE29258

Reexamination Certificate

active

07843002

ABSTRACT:
A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.

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