Fully depleted SOI multiple threshold voltage application

Details Fully depleted SOI multiple threshold voltage application Fully depleted SOI multiple threshold voltage application

2008-06-03

2008-06-03

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21623, C257SE21637

Reexamination Certificate

active

07382023

ABSTRACT:
An integrated circuit comprises a substrate and a buried dielectric formed in the substrate. The buried dielectric has a first thickness in a first region, a second buried dielectric thickness in a second region, and a step between the first and second regions. A semiconductor layer overlies the buried dielectric.

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Li, et al., “Threshold Voltage Control for Deep Sub-micrometer Fully Depleted SOI MOSFET,” University of Idaho, date unknown.
Polishchuk, et al., Dual Work Function Metal Gate CMOS Transistors by Ni—Ti Interdiffusion, IEEE Electron Device Letters, vol. 23, No. 4, Apr. 2002.

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