Fully-depleted SOI MOSFETs with low source and drain...

Details Fully-depleted SOI MOSFETs with low source and drain... Fully-depleted SOI MOSFETs with low source and drain...

2005-01-11

2005-01-11

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S183000, C438S184000

Reexamination Certificate

active

06841831

ABSTRACT:
A sub-0.05 μm channel length fully-depleted SOI MOSFET device having low source and drain resistance and minimal overlap capacitance and a method of fabricating the same are provided. The sub-0.05 μm channel length fully-depleted SOI MOSFET device includes an SOI structure which contains at least an SOI layer having a channel region of a first thickness and abutting source/drain regions of a second thickness present therein, wherein the second thickness is greater than the first thickness and the source/drain regions having a salicide layer present thereon. A gate region is present also atop the SOI layer.

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