Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-17
2011-05-17
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21001, C257SE49001
Reexamination Certificate
active
07943997
ABSTRACT:
Disclosed are embodiments of a field effect transistor (FET) and, more particularly, a fully-depleted, thin-body (FDTB) FET that allows for scaling with minimal short channel effects, such as drain induced barrier lowering (DIBL) and saturation threshold voltage (Vtsat) roll-off, at shorter channel lengths. The FDTB FET embodiments are configured with either an edge back-gate or split back-gate that can be biased in order to selectively adjust the potential barrier between the source/drain regions and the channel region for minimizing off-state leakage current between the drain region and the source region and/or for varying threshold voltage. These unique back-gate structures avoid the need for halo doping to ensure linear threshold voltage (Vtlin) roll-up at smaller channel lengths and, thus, avoid across-chip threshold voltage variations due to random doping fluctuations. Also disclosed are method embodiments for forming such FETs.
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Adkisson James W.
Anderson Brent A.
Bryant Andres
Clark, Jr. William F.
Nowak Edward J.
Gibb IP Law Firm, LLC
International Business Machines - Corporation
McCall Shepard Sonya D
Menz Laura M
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