Four-bit finfet NVRAM memory device

Details Four-bit finfet NVRAM memory device Four-bit finfet NVRAM memory device

2006-06-27

2008-08-26

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000

Reexamination Certificate

active

07416941

ABSTRACT:
A four-bit FinFET memory cell, a method of fabricating a four-bit FinFET memory cell and an NVRAM formed of four-bit FINFET memory cells. The four-bit memory cell including two charge storage regions in opposite ends of a dielectric layer on a first sidewall of a fin of a FinFET and two additional charge storage regions in opposite ends of a dielectric layer on a second sidewall of the fin of the FinFET, the first and second sidewalls being opposite one another.

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patent: 5291583 (1993-11-01), None
Alberts, et al.; Multi-Bit Storage FET EAROM Cell; IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981; pp. 3311-3314.

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