Forming ultra-shallow junctions

Details Forming ultra-shallow junctions Forming ultra-shallow junctions

2006-06-08

2008-11-25

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S530000, C438S585000, C257SE21634

Reexamination Certificate

active

07456068

ABSTRACT:
A method to form an ultra-shallow junction is described. In one embodiment, a replacement gate process is utilized to enable the overlap of a gate electrode over the regions of a semiconductor substrate where tip extensions reside. In another embodiment, a sacrificial spacer is utilized in conjunction with the replacement gate process. In one embodiment, an initial gate electrode is formed with a gate length smaller than the desired final gate length and is subsequently replaced with an expanded gate electrode having the desired gate length.

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