Forming thin hard mask over air gap or porous dielectric

Details Forming thin hard mask over air gap or porous dielectric Forming thin hard mask over air gap or porous dielectric

2007-07-03

2007-07-03

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S618000, C438S637000, C438S638000, C257SE21495

Reexamination Certificate

active

10422432

ABSTRACT:
A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially porous material that may be later densified. The thin hard mask may be used to prevent etch steps used in forming an unlanded via from reaching layers below the hard mask.

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