Forming silicon oxide film from RF plasma of oxidizing gas

Details Forming silicon oxide film from RF plasma of oxidizing gas Forming silicon oxide film from RF plasma of oxidizing gas

2011-07-26

2011-07-26

Pizarro, Marcos D (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257S632000, C438S765000, C438S773000, C118S715000

Reexamination Certificate

active

07985695

ABSTRACT:
An oxide film formation method comprises steps of: generating a plasma from a gas mixture containing an inert gas and an oxidizing gas whose mixing ratio to the inert gas is higher than 0, and is 0.007 or lower; and forming an oxide film on a surface of a silicon substrate by using the plasma.

REFERENCES:
patent: 4484210 (1984-11-01), Shiraki et al.
patent: 5734195 (1998-03-01), Takizawa et al.
patent: 5874348 (1999-02-01), Takizawa et al.
patent: 6140213 (2000-10-01), Takizawa et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 2005/0005844 (2005-01-01), Kitagawa et al.
patent: 2005/0215015 (2005-09-01), Ahn et al.
patent: 2006/0286776 (2006-12-01), Ranish et al.
patent: 2007/0071908 (2007-03-01), Rossman
patent: 2007/0128880 (2007-06-01), Kitagawa et al.
patent: 06-338507 (1994-12-01), None
patent: 6-338507 (1994-12-01), None
patent: 2000-260767 (2000-09-01), None
patent: 2000-286259 (2000-10-01), None
patent: 2004-349546 (2004-12-01), None
ULSI Fabrication Contamination Control Technique, Science Forum, pp. 89-97, 1992 and translation of pp. 89-94.

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