Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2007-06-12
2010-10-19
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C257S288000, C257SE29104
Reexamination Certificate
active
07816686
ABSTRACT:
A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; an epitaxial region having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the epitaxial region comprises an impurity of a first conductivity type; a first portion of the semiconductor substrate adjoining the epitaxial region, wherein the first portion of the semiconductor substrate is of the first conductivity type; and a second portion of the semiconductor substrate adjoining the first portion. The second portion of the semiconductor substrate is of a second conductivity type opposite the first conductivity type. A silicide region is formed on the epitaxial region and the first and the second portions of the semiconductor substrate.
REFERENCES:
patent: 7592214 (2009-09-01), Ohta
patent: 7612364 (2009-11-01), Chuang et al.
patent: 2005/0184345 (2005-08-01), Lin et al.
patent: 2005/0224798 (2005-10-01), Buss
Chuang Harry
Liao Ken
Pan Kuo-Hua
Tai Augus
Cruz Leslie Pilar
Purvis Sue
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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