Forming self-aligned nano-electrodes

Details Forming self-aligned nano-electrodes Forming self-aligned nano-electrodes

2007-12-25

2007-12-25

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S151000, C438S197000, C977S936000, C257SE21483

Reexamination Certificate

active

10819790

ABSTRACT:
A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using spacer technology, the gap between the electrodes may be made very small.

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