Forming pocket and LDD regions using separate masks

Details Forming pocket and LDD regions using separate masks Forming pocket and LDD regions using separate masks

2006-05-01

2008-12-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S372000, C438S374000, C438S305000, C438S508000

Reexamination Certificate

active

07468305

ABSTRACT:
A method of decoupling the formation of LDD and pocket regions is provided. The method includes providing a semiconductor chip including active regions, forming gate structures in the active regions, forming N-LDD regions on the semiconductor chip using an N-LDD mask, forming N-Pocket regions on the semiconductor chip using an N-Pocket mask, forming P-LDD regions on the semiconductor chip using a P-LDD mask, and forming P-Pocket regions on the semiconductor chip using a P-Pocket mask.

REFERENCES:
patent: 6413824 (2002-07-01), Chatterjee et al.
patent: 2001/0025994 (2001-10-01), Yoshino et al.
patent: 2007/0029608 (2007-02-01), Huang

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