Forming method of resist pattern

Details Forming method of resist pattern Forming method of resist pattern

1988-02-17

1990-06-12

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430328, 430330, G03C 516

Patent

active

049332635

ABSTRACT:
Disclosed is a method of forming a resist pattern by exposing a novolak type positive photoresist to ultraviolet light in a pattern, irradiating the entire surface with far ultraviolet light with wavelength of 200 to 320 nm in an atmosphere with inert gas partial pressure ratio of 90% or more, and developing it. According to this method, a specific gradient of solubility in developing solution becoming higher from the surface toward the depthwise direction is provided, and a contrast value of twice as high as in the conventional method can be obtained, and a resist pattern of high aspect ratio is formed.

REFERENCES:
Pacansky, "Exposure Procedure for Positive Photoresists", IBM Tech. Disc. Bulletin, vol. 20(7), Dec. 1977.

Affiliated with

Also associated with

Rating

Forming method of resist pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming method of resist pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming method of resist pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-616809