Forming integrated circuit devices

Details Forming integrated circuit devices Forming integrated circuit devices

2007-08-21

2007-08-21

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179

Reexamination Certificate

active

11043741

ABSTRACT:
Methods of forming integrated circuit devices are provided. A first mask layer is formed overlying a first portion of a semiconductor substrate. The first mask layer further overlies a second mask layer overlying a second portion of the semiconductor substrate. The first mask layer overlying the first portion of the semiconductor substrate is patterned to define areas for removal of one or more layers of material interposed between the semiconductor substrate and the first mask layer. Portions of the one or more layers of material exposed by the patterned first mask layer are removed to define elements of the integrated circuit device overlying the first portion of the semiconductor substrate.

REFERENCES:
patent: 5175120 (1992-12-01), Lee
patent: 6103020 (2000-08-01), Roberts et al.
patent: 2002/0132458 (2002-09-01), Chien et al.
patent: 2005/0098821 (2005-05-01), Chao et al.

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