Forming high-k dielectric layers on smooth substrates

Details Forming high-k dielectric layers on smooth substrates Forming high-k dielectric layers on smooth substrates

2007-11-29

2009-11-10

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C257SE21215, C257SE21240

Reexamination Certificate

active

07615441

ABSTRACT:
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.

REFERENCES:
patent: 6452229 (2002-09-01), Krivokapic
patent: 6504214 (2003-01-01), Yu et al.
patent: 6627556 (2003-09-01), Aronowitz et al.
patent: 2004/0198069 (2004-10-01), Metzner et al.

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