Forming gate oxides having multiple thicknesses

Details Forming gate oxides having multiple thicknesses Forming gate oxides having multiple thicknesses

2007-01-09

2007-01-09

Graybill, David E. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S258000, C438S279000, C438S286000, C438S592000

Reexamination Certificate

active

10724483

ABSTRACT:
Gate oxides having different thicknesses are formed on a semiconductor substrate by forming a first gate oxide on the top surface of the substrate, forming a sacrificial hard mask over a selected area of the first gate oxide; and then forming a second gate oxide. A first poly layer may be formed on the first gate oxide, under the hard mask. After the hard mask is removed, a second poly layer may be formed over the second gate oxide and over the first poly layer. This enables the use of high-k dielectric materials, and the first gate oxide can be thinner than the second gate oxide.

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