Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2011-04-19
2011-04-19
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S077000, C257SE29104, C257SE29246
Reexamination Certificate
active
07928474
ABSTRACT:
A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate; an insulating region extending from substantially a top surface of the semiconductor substrate into the semiconductor substrate; an embedded dielectric spacer adjacent the insulating region, wherein a bottom of the embedded dielectric spacer adjoins the semiconductor substrate; and a semiconductor material adjoining a top edge and extending on a sidewall of the embedded dielectric spacer.
REFERENCES:
patent: 4394674 (1983-07-01), Sakuma et al.
patent: 6483158 (2002-11-01), Lee
patent: 7545023 (2009-06-01), Chien
patent: 2001/0045604 (2001-11-01), Oda et al.
patent: 2005/0280052 (2005-12-01), Holz et al.
patent: 2006/0088968 (2006-04-01), Shin et al.
patent: 2007/0018205 (2007-01-01), Chidambarrao et al.
patent: 1805151 (2006-07-01), None
Cam, C.L., et al., “A Low Cost Drive Current Enhancement Technique using Shallow Trench Isolation induced Stress for 45-nm node,” 2006 Symposium on VLSI Technology Digest of Technical Papers, IEEE, 2 pp.
Ge, C.-H., et al., “Process-Strained Si (PSS) CMOS Technology Featuring 3D Strain Engineering,” International Electron Devices Meeting, 2003, IEEE, pp. 73-76.
Ko Chih-Hsin
Lee Wen-Chin
Lin Hong-Nien
Malsawma Lex
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Forming embedded dielectric layers adjacent to sidewalls of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Forming embedded dielectric layers adjacent to sidewalls of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming embedded dielectric layers adjacent to sidewalls of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2632756