Forming dual metal complementary metal oxide semiconductor...

Details Forming dual metal complementary metal oxide semiconductor... Forming dual metal complementary metal oxide semiconductor...

2004-07-12

2008-10-21

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S270000, C257S407000

Reexamination Certificate

active

07439113

ABSTRACT:
Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.

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