Forming an antireflective coating for VLSI metallization

Details Forming an antireflective coating for VLSI metallization Forming an antireflective coating for VLSI metallization

1986-11-06

1989-06-13

Morgenstern, Norman

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419226, 437235, 437245, 4271263, 4271264, C23C 1400, B05D 512

Patent

active

048390100

ABSTRACT:
Method of forming an antireflective coating on a face of a semiconductor which includes forming a metal oxide layer on the face, heating the oxide layer to a temperature sufficiently high to cause the migration of free metal atoms over the surface of the metal oxide and then sputtering a thin layer of aluminum or aluminum alloy on the oxide layer of a thickness such that bumps are formed which reduce the specularity of the surface. The aluminum atoms form bumps which reduce the specularity of the surface.

REFERENCES:
patent: 3884698 (1975-05-01), Kakihama
patent: 4307132 (1981-12-01), Chu et al.
patent: 4462884 (1984-07-01), Gillery
patent: 4490184 (1984-12-01), Forcht et al.

Affiliated with

Also associated with

Rating

Forming an antireflective coating for VLSI metallization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming an antireflective coating for VLSI metallization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming an antireflective coating for VLSI metallization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1275283