Forming abrupt source drain metal gate transistors

Details Forming abrupt source drain metal gate transistors Forming abrupt source drain metal gate transistors

2011-05-31

2011-05-31

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S271000, C438S589000, C257SE21444

Reexamination Certificate

active

07951673

ABSTRACT:
A gate structure may be utilized as a mask to form source and drain regions. Then the gate structure may be removed to form a gap and spacers may be formed in the gap to define a trench. In the process of forming a trench into the substrate, a portion of the source drain region is removed. Then the substrate is filled back up with an epitaxial material and a new gate structure is formed thereover. As a result, more abrupt source drain junctions may be achieved.

REFERENCES:
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patent: 2002/0001930 (2002-01-01), Lee
patent: 2002/0037619 (2002-03-01), Sugihara et al.
patent: 2004/0108558 (2004-06-01), Kwak et al.
patent: 2004/0121546 (2004-06-01), Yoo

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