Forming a semiconductor structure in manufacturing a...

Details Forming a semiconductor structure in manufacturing a... Forming a semiconductor structure in manufacturing a...

2006-07-10

2009-06-23

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S222000, C438S510000, C257S510000

Reexamination Certificate

active

07550343

ABSTRACT:
In one embodiment, a semiconductor structure used in manufacturing a semiconductor device includes a substrate layer. The structure also includes first and second isolation regions formed by etching an oxide layer provided on the substrate layer to define an epitaxial growth surface of the substrate layer for epitaxial growth of a substrate material on the epitaxial growth surface between the first and second isolation regions. The structure also includes an active region that includes the epitaxially-grown substrate material between the first and second isolation regions, the active region formed by epitaxially growing the substrate material on the epitaxial growth surface of the substrate layer.

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