Forming a retrograde well in a transistor to enhance...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S217000, C438S290000, C438S291000, C438S302000, C438S306000, C438S528000, C438S546000, C438S547000, C438S910000

Reexamination Certificate

active

06927137

ABSTRACT:
A method of forming a retrograde well in a transistor is provided. A transistor structure having a substrate, a gate, and a gate oxide layer between the substrate and the gate is formed. The substrate includes a channel region located generally below the gate. A first dopant is implanted into the channel region. A second dopant is implanted into the substrate to form a doped source region and a doped drain region. A third dopant is implanted into the gate oxide layer. A source/drain anneal is performed to form a source and a drain in the doped source region and the doped drain region, respectively. The source/drain anneal causes a portion of the first dopant in the channel region to be attracted by the third dopant into the gate oxide layer.

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