Forming a cap above a metal layer

Details Forming a cap above a metal layer Forming a cap above a metal layer

2006-06-06

2006-06-06

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07056817

ABSTRACT:
In one embodiment, the present invention includes an apparatus having a metal layer with a pad disposed above a substrate; and a cap disposed above the metal layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.

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patent: 1 176 637 (2002-01-01), None
patent: 04 142053 (1992-05-01), None

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