Forming a buried insulator layer using plasma source ion implant

Details Forming a buried insulator layer using plasma source ion implant Forming a buried insulator layer using plasma source ion implant

1994-07-25

1997-08-26

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438766, 438407, H01L 21265

Patent

active

056610432

ABSTRACT:
A method and apparatus for forming a buried insulator layer, typically a silicon dioxide layer, includes using plasma source ion implantation to uniformly implant ions into exposed regions of a semiconductor wafer. A silicon-on-insulator (SOI) structure is formed by an anneal step before fabricating an integrated circuit into the thin semiconductor layer above the buried insulator layer.

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Torii et al, "Very High Current ECR Ion Source for an Oxygen Ion Implanter Nuclear Instruments and Methods in Physics Research", Section B, Mar. 87, vol. B21, No. 2-4, pp. 178-181.

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