Forming a buried bit line in a bulb-shaped trench

Details Forming a buried bit line in a bulb-shaped trench Forming a buried bit line in a bulb-shaped trench

2008-05-08

2010-12-28

Fahmy, Wael M (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S701000, C257S331000, C257SE21658, C257SE29257

Reexamination Certificate

active

07858477

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a bulb-type trench separated from a surrounding gate and forming a buried bit line in the bulb-type trench, thereby preventing electric short of a word line and the buried bit line. A semiconductor device includes a vertical pillar formed over a semiconductor substrate, a surrounding gate formed outside the vertical pillar, and a buried bit line separated from the surrounding gate.

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patent: 100660881 (2006-12-01), None
patent: 10-2007-0009140 (2007-01-01), None

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