Forming a barrier layer in interconnect joints and...

Details Forming a barrier layer in interconnect joints and... Forming a barrier layer in interconnect joints and...

2005-03-11

2008-08-26

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S648000, C438S672000, C257SE21295, C257SE21508

Reexamination Certificate

active

07416980

ABSTRACT:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer.

REFERENCES:
patent: 6297146 (2001-10-01), Lopatin
patent: 6383923 (2002-05-01), Brown et al.
patent: 6861349 (2005-03-01), Lopatin et al.
patent: 2006/0071340 (2006-04-01), Dubin et al.

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