Formation of ultra-thin oxide layers by self-limiting...

Details Formation of ultra-thin oxide layers by self-limiting... Formation of ultra-thin oxide layers by self-limiting...

2007-06-26

2007-06-26

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S287000, C438S591000

Reexamination Certificate

active

10630969

ABSTRACT:
Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2layers with a thickness of about 15 A, where the thickness of the SiO2layers varies less than about 1 A over the substrates.

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