Formation of oxynitride and polysilicon layers in a single react

Details Formation of oxynitride and polysilicon layers in a single react Formation of oxynitride and polysilicon layers in a single react

1997-05-15

1999-12-07

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438761, 438775, 438786, H01L 21336

Patent

active

059982705

ABSTRACT:
A semiconductor device fabrication process in which an oxynitride layer and a polysilicon layer are formed in the same reaction chamber is provided. In accordance with one embodiment of the invention, a semiconductor device is formed by forming, in a reaction chamber, an oxynitride layer on a surface of a substrate and forming, in the same reaction chamber, a polysilicon layer over the oxynitride layer. The oxynitride layer may be used to form a gate oxide and the polysilicon layer used to form a gate electrode.

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