Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1999-06-24
2000-08-01
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438694, 438698, 438700, 205122, 216 2, 1566431, H01L 2100
Patent
active
060966564
ABSTRACT:
A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.
REFERENCES:
patent: 5252294 (1993-10-01), Kroy
patent: 5501893 (1996-03-01), Laermer
patent: 5569355 (1996-10-01), Then et al.
patent: 5585069 (1996-12-01), Zanzucchi
patent: 5632876 (1997-05-01), Zanzucchi
patent: 5660728 (1997-08-01), Saaski
patent: 5681484 (1997-10-01), Zanzucchi
patent: 5729244 (1998-03-01), Lockwood
patent: 5755408 (1998-05-01), Schmidt
patent: 5783452 (1998-07-01), Jons
patent: 5801442 (1998-09-01), Hamilton
patent: 5858193 (1999-01-01), Zanzucchi
patent: 5863708 (1999-01-01), Zanzucchi
patent: 5871158 (1999-02-01), Frazier
patent: 5876582 (1999-03-01), Frazier
patent: 5876675 (1999-03-01), Kennedy
patent: 5897097 (1999-04-01), Biegelsen
patent: 5909280 (1999-06-01), Zavracky
C.M. Matzke, D.W. Arnold, C.I.H. Ashby, S.H. Kravitz, M.E. Warren and G.C. Bailey, "Quartz Channel Fabrication for Electrokinetically Driven Separations," Proceedings of the SPIE Conference on Microfluidic Devices and Systems, SPIE vol. 3515, pp. 164-171, Sep. 1998.
C.M. Matzke, R.J. Kottenstette, S.A. Casalnuovo, G.C. Frye-Mason, M.L. Hudson, D.Y. Sasaki, R.P. Manginell, and C.C. Wong, "Microfabricated Silicon Gas Chromatographic Micro-Channels: Fabrication and Performance," Proceedings of the SPIE Conference on Micromachining and Microfabrication Process Technology IV, SPIE vol. 3511, pp. 262-268, Sep. 1998.
S. Sitbon, M.C. Hugon, B. Agius, F. Abel, J.L. Courant and M. Puech, Low Temperature Deposition of Silicon Nitride Films by Distributed Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition, Journal of Vacuum Science and Technology A, vol. 13, pp. 2900-2907, Nov./Dec. 1995.
Ashby Carol I. H.
Bridges Monica M.
Manginell Ronald P.
Matzke Carolyn M.
Bowers Charles
Hohimer John P.
Kilday Lisa
Sandia Corporation
LandOfFree
Formation of microchannels from low-temperature plasma-deposited does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Formation of microchannels from low-temperature plasma-deposited, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of microchannels from low-temperature plasma-deposited will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-663504