Formation of low leakage thermally assisted radical nitrided...

Details Formation of low leakage thermally assisted radical nitrided... Formation of low leakage thermally assisted radical nitrided...

2007-09-11

2007-09-11

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S764000, C438S778000

Reexamination Certificate

active

11197070

ABSTRACT:
One or more aspects of the present invention relate to forming a dielectric suitable for use as a gate dielectric in a transistor. The gate dielectric is formed by a nitridation process that adds nitrogen to a semiconductor substrate.

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“Atomic-Scale Characterization of Nitridation Processes on Si(100)-2×1 Surfaces by Radical Nitrogen”, Daisuke Matsushita, Hiroya Ikeda, Akira Sakai, Saigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys, vol. 40 (2001), Part 1, No. 4B, Apr. 2001, pp. 2827-2829.

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