Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-18
2007-09-18
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S383000, C257S384000, C257S412000, C257S413000, C257S347000, C257SE21203, C257SE21439, C257SE21636, C257SE21640, C257SE29178, C257SE29266
Reexamination Certificate
active
10890753
ABSTRACT:
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.
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Cabral, Jr. Cyril
Dziobkowski Chester T.
Fang Sunfei
Gousev Evgeni
Jammy Rajarao
Scully , Scott, Murphy & Presser, P.C.
Sefer A.
Trepp, esq. Robert M.
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