Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-02-27
2010-06-15
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S592000, C438S655000, C438S664000, C438S683000
Reexamination Certificate
active
07737015
ABSTRACT:
A simple and cost effective method of forming a fully silicided (FUSI) gate of a MOS transistor is disclosed. In one example, the method comprises forming a nitride hardmask overlying a polysilicon gate, forming an S/D silicide in source/drain regions of the transistor, oxidizing a portion of the S/D silicide to form an oxide barrier overlying the S/D silicide in the source/drain regions, removing the nitride hardmask from the polysilicon gate, and forming a gate silicide such as by deposition of a gate silicide metal over the polysilicon gate and the oxide barrier in the source/drain regions to form a fully silicided (FUSI) gate in the transistor. Thus, the oxide barrier protects the source/drain regions from additional silicide formation by the gate silicide metal formed thereafter. The method may further comprise selectively removing the oxide barrier in the source/drain regions after forming the fully silicided (FUSI) gate.
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Huffman Craig
Kohli Puneet
Ramin Manfred
Brady III Wade J.
Garner Jacqueline J.
Telecky Jr Frederick J.
Texas Instruments Incorporated
Thomas Toniae M
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