Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-05-28
2009-10-20
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C117S084000, C117S088000, C427S255280, C438S685000
Reexamination Certificate
active
07605083
ABSTRACT:
Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
REFERENCES:
patent: 4892751 (1990-01-01), Miyake et al.
patent: 4976839 (1990-12-01), Inoue et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5227335 (1993-07-01), Holschwandner et al.
patent: 5306666 (1994-04-01), Izumi et al.
patent: 5804488 (1998-09-01), Shih et al.
patent: 5834372 (1998-11-01), Lee et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5989345 (1999-11-01), Hatano et al.
patent: 6009830 (2000-01-01), Li et al.
patent: 6037263 (2000-03-01), Chang
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6162715 (2000-12-01), Mak et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206967 (2001-03-01), Mak et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6218298 (2001-04-01), Hoinkis
patent: 6245192 (2001-06-01), Dhindsa et al.
patent: 6251190 (2001-06-01), Mak et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6274484 (2001-08-01), Tsai et al.
patent: 6284646 (2001-09-01), Leem et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6294836 (2001-09-01), Paranjpe et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6306216 (2001-10-01), Kim et al.
patent: 6309713 (2001-10-01), Mak et al.
patent: 6309966 (2001-10-01), Govindarajan et al.
patent: 6326297 (2001-12-01), Vijayendran
patent: 6333260 (2001-12-01), Kwon et al.
patent: 6335280 (2002-01-01), van der Jeugd
patent: 6342277 (2002-01-01), Sherman
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6365502 (2002-04-01), Paranjpe et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6369430 (2002-04-01), Adetutu et al.
patent: 6372598 (2002-04-01), Kang et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6420189 (2002-07-01), Lopatin
patent: 6423619 (2002-07-01), Grant et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6447933 (2002-09-01), Wang et al.
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6468924 (2002-10-01), Lee et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6475910 (2002-11-01), Sneh
patent: 6482262 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6534404 (2003-03-01), Danek et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6569501 (2003-05-01), Chiang et al.
patent: 6599572 (2003-07-01), Saanila et al.
patent: 6607976 (2003-08-01), Chen et al.
patent: 6620723 (2003-09-01), Byun et al.
patent: 6627995 (2003-09-01), Paranjpe et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 6645847 (2003-11-01), Paranjpe et al.
patent: 6660126 (2003-12-01), Nguyen et al.
patent: 6686271 (2004-02-01), Raaijmakers et al.
patent: 6689220 (2004-02-01), Nguyen
patent: 6718126 (2004-04-01), Lei
patent: 6740585 (2004-05-01), Yoon et al.
patent: 6772072 (2004-08-01), Ganguli et al.
patent: 6777352 (2004-08-01), Tepman et al.
patent: 6790773 (2004-09-01), Drewery et al.
patent: 6797340 (2004-09-01), Fang et al.
patent: 6809026 (2004-10-01), Yoon et al.
patent: 6812126 (2004-11-01), Paranjpe et al.
patent: 6814087 (2004-11-01), Chandran et al.
patent: 6815285 (2004-11-01), Choi et al.
patent: 6818250 (2004-11-01), George et al.
patent: 6821563 (2004-11-01), Yudovsky
patent: 6827978 (2004-12-01), Yoon et al.
patent: 6831004 (2004-12-01), Byun et al.
patent: 6833161 (2004-12-01), Wang et al.
patent: 6838376 (2005-01-01), Matsuse et al.
patent: 6846516 (2005-01-01), Yang et al.
patent: 6855368 (2005-02-01), Kori et al.
patent: 6861356 (2005-03-01), Matsuse et al.
patent: 6875271 (2005-04-01), Glenn et al.
patent: 6893915 (2005-05-01), Park et al.
patent: 6905541 (2005-06-01), Chen et al.
patent: 6915592 (2005-07-01), Guenther
patent: 6932871 (2005-08-01), Chang et al.
patent: 6936538 (2005-08-01), Byun
patent: 6939804 (2005-09-01), Lai et al.
patent: 6951804 (2005-10-01), Seutter et al.
patent: 6955211 (2005-10-01), Ku et al.
patent: 6958174 (2005-10-01), Klaus et al.
patent: 6998014 (2006-02-01), Chen et al.
patent: 7005372 (2006-02-01), Levy et al.
patent: 7026238 (2006-04-01), Xi et al.
patent: 7033922 (2006-04-01), Kori et al.
patent: 7094680 (2006-08-01), Seutter et al.
patent: 7101795 (2006-09-01), Xi et al.
patent: 7115494 (2006-10-01), Sinha et al.
patent: 7115499 (2006-10-01), Wang et al.
patent: 7141494 (2006-11-01), Lee et al.
patent: 7186385 (2007-03-01), Ganguli et al.
patent: 7208413 (2007-04-01), Byun et al.
patent: 7211144 (2007-05-01), Lu et al.
patent: 7211508 (2007-05-01), Chung et al.
patent: 7220673 (2007-05-01), Xi et al.
patent: 7238552 (2007-07-01), Byun
patent: 7262125 (2007-08-01), Wongsenakhum et al.
patent: 7279432 (2007-10-01), Xi et al.
patent: 7384867 (2008-06-01), Lai et al.
patent: 7408225 (2008-08-01), Shinriki et al.
patent: 7416979 (2008-08-01), Yoon et al.
patent: 7429516 (2008-09-01), Wang et al.
patent: 7465665 (2008-12-01), Xi et al.
patent: 7465666 (2008-12-01), Kori et al.
patent: 2001/0000866 (2001-05-01), Sneh et al.
patent: 2001/0002280 (2001-05-01), Sneh
patent: 2001/0009140 (2001-07-01), Bondestam et al.
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0029094 (2001-10-01), Mee-Young et al.
patent: 2001/0034123 (2001-10-01), Jeon et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0054730 (2001-12-01), Kim et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0000598 (2002-01-01), Kang et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2002/0007790 (2002-01-01), Park
patent: 2002/0019121 (2002-02-01), Pyo
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0037630 (2002-03-01), Agarwal et al.
patent: 2002/0048880 (2002-04-01), Lee
patent: 2002/0052097 (2002-05-01), Park
patent: 2002/0055235 (2002-05-01), Agarwal et al.
patent: 2002/0060363 (2002-05-01), Xi et al.
patent: 2002/0061612 (2002-05-01), Sandhu et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0073924 (2002-06-01), Chiang et al.
patent: 2002/0076481 (2002-06-01), Chiang et al.
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2002/0076508 (2002-06-01), Chiang et al.
patent: 2002/0076837 (2002-06-01), Hujanen et al.
patent: 2002/0086111 (2002-07-01), Byun et al.
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2002/0090829 (2002-07-01), Sandhu et al.
patent: 2002/0094689 (2002-07-01), Park
patent: 2002/0104481 (2002-08-01), Chiang et al.
patent: 2002/0105088 (2002-08-01), Yang et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2002/0109168 (2002-08-01), Kim et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: 2002/0121241 (2002-09-01), Nguyen et al.
patent: 2002/0121342 (2002-09-01), Nguyen et al.
patent: 2002/0121697 (2002-09-01), Marsh
patent: 2002/01
Byun Jeong Soo
Chang Mei
Chung Hua
Fang Hongbin
Gelatos Avgerinos
Applied Materials Inc.
Patterson & Sheridan LLP
Sarkar Asok K
LandOfFree
Formation of composite tungsten films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Formation of composite tungsten films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of composite tungsten films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4089877