Formation of boride barrier layers using chemisorption...

Details Formation of boride barrier layers using chemisorption... Formation of boride barrier layers using chemisorption...

2007-04-24

2007-04-24

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000

Reexamination Certificate

active

10993925

ABSTRACT:
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

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