Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-08-12
1998-04-21
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, 438696, 438717, H01L 21283, H01L 2131
Patent
active
057417423
ABSTRACT:
A method of forming an aluminum-alloy pattern at room temperature, which is capable of eliminating the generation of after-corrosion and enhancing the anisotropic processing. In a first step, an etching mask made of a silicon nitride based film is formed on an aluminum-alloy film formed on a barrier metal layer which is formed on a substrate. In a second step, the aluminum-alloy film is dry-etched at room temperature, to form a pattern of the aluminum-alloy film. The etching selection ratio of the aluminum-alloy film to the etching mask is thus improved, and further a sidewall protective film made of aluminum nitride is formed on the etching sidewall, thereby sufficiently performing the anisotropic processing for the aluminum-alloy pattern. In subsequent steps, the barrier metal layer may also be etched and removed at room temperature, and a further sidewall protective film made of aluminum oxide is formed on the etching sidewall as a result of oxygen plasma processing. Any remaining barrier metal layer may be perfectly removed as a final step as a result of over-etching.
REFERENCES:
patent: 4828649 (1989-05-01), Davis et al.
patent: 4915779 (1990-04-01), Srodes et al.
patent: 5024722 (1991-06-01), Cathey, Jr.
patent: 5217570 (1993-06-01), Kadomura
patent: 5369053 (1994-11-01), Fang
Kamide et al, "HBr Added High Selective Etch Process of Al Alloy Multi-Layers", Proceedings of the 4th Symposium on Semiconductors and Integrated Circuits Technology, Dec. 19-20, 1991, pp. 121-126.
Aoki et al, "After-Corrosion Suppression Using Low-Temperature Al-Si-Cu Etching", Proceedings of Symposium on Dry Process, Nov. 1-2, 1990 pp. 141-145.
Kananen Ronald P.
Quach T. N.
Sony Corporation
LandOfFree
Formation of aluminum-alloy pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Formation of aluminum-alloy pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of aluminum-alloy pattern will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2057405