Formation of a super steep retrograde channel

Details Formation of a super steep retrograde channel Formation of a super steep retrograde channel

2011-08-23

2011-08-23

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S297000, C438S305000, C257S297000, C257S305000

Reexamination Certificate

active

08003471

ABSTRACT:
Systems and methods for raised source/drain with super steep retrograde channel. In accordance with a first embodiment of the present invention, in one embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments in accordance with one embodiment may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art.

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Non Final Office Action; Mail Date Jun. 28, 2008; U.S. Appl. No. 11/529,972.
Non Final Office Action; Mail Date May 8, 2009; U.S. Appl. No. 11/529,972.
Notice of Allowance; Mail Date Nov. 2, 2009; U.S. Appl. No. 11/529,972.

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