Formation of a double gate structure

Details Formation of a double gate structure Formation of a double gate structure

2005-10-18

2005-10-18

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S719000

Reexamination Certificate

active

06955964

ABSTRACT:
A method of forming a double gate structure including sidewalls of substantially similar vertical profile. One photoresist masking step is used to define the top gate, which is then used as a mask to define the bottom gate. The bottom polysilicon layer is etched by a physical and chemical process combination to form a bottom gate with vertical sidewalls substantially inline with the sidewalls of the top gate.

REFERENCES:
patent: 5933729 (1999-08-01), Chan
patent: 6458655 (2002-10-01), Yuzuriha et al.
patent: 2003/0134472 (2003-07-01), Yang

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