Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2006-12-01
2010-11-23
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S008000, C117S009000, C117S105000, C117S109000, C117S201000
Reexamination Certificate
active
07837790
ABSTRACT:
Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, and spike annealing in a environment containing nitrogen.
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Kim Yihwan
Samoilov Arkadii V.
Applied Materials Inc.
Diehl Servilla LLC
Kunemund Robert M
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