Formation and treatment of epitaxial layer containing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state

Reexamination Certificate

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C117S008000, C117S009000, C117S105000, C117S109000, C117S201000

Reexamination Certificate

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07837790

ABSTRACT:
Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, and spike annealing in a environment containing nitrogen.

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