Fork-like memory structure for ULSI DRAM and method of fabricati

Details Fork-like memory structure for ULSI DRAM and method of fabricati Fork-like memory structure for ULSI DRAM and method of fabricati

1996-12-05

2000-01-04

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438947, H01L 218242

Patent

active

060109327

ABSTRACT:
A masking and etching technique during the formation of a memory cell capacitor which simultaneously separates storage poly into individual storage poly nodes and etches recesses into the storage poly nodes which increase the surface area of the storage poly nodes and thereby increase the capacitance of a completed memory cell without additional processing steps.

REFERENCES:
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5292677 (1994-03-01), Dennison
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5362666 (1994-11-01), Dennison
patent: 5429980 (1995-07-01), Yang et al.
patent: 5438013 (1995-08-01), Kim et al.
patent: 5457063 (1995-10-01), Park
patent: 5459094 (1995-10-01), Jun
patent: 5459095 (1995-10-01), Huang et al.
patent: 5491356 (1996-02-01), Dennison et al.
patent: 5494841 (1996-02-01), Dennison et al.
patent: 5508223 (1996-04-01), Tseng
patent: 5733808 (1998-03-01), Tseng

Affiliated with

Also associated with

Rating

Fork-like memory structure for ULSI DRAM and method of fabricati does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fork-like memory structure for ULSI DRAM and method of fabricati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fork-like memory structure for ULSI DRAM and method of fabricati will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072205