Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-02-08
1996-05-21
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429836, 216 66, C23C 1446, B23K 1500
Patent
active
055185959
ABSTRACT:
An apparatus for effecting micro fabrication of wafer surfaces by emitting a focused ion beam thereto, in which a gas is jetted through a gas introducing pipe to an ion emitter whereby the gas is adsorbed to an emitter surface. A potential difference is applied between the emitter and an extraction electrode to extract ions. The ions are then accelerated and focused into a focused ion beam having an etching function. The focused ion beam is deflected by a deflecting electrode to form a predetermined pattern. The focused ion beam is decelerated by action of a decelerating electrode prior to impingement on a wafer under treatment. Consequently, a wafer surface is etched to define the predetermined pattern without damage to the wafer surface.
REFERENCES:
patent: Re33193 (1990-04-01), Yamaguchi et al.
patent: 4457803 (1984-07-01), Takigawa
patent: 4659449 (1987-04-01), Watanabe
patent: 4874460 (1989-10-01), Nakagawa et al.
patent: 4901667 (1990-02-01), Suzuki et al.
patent: 5035787 (1991-07-01), Parker et al.
Patent Abstracts of Japan, vol. 7, No. 69 (C-158-23) 23 Mar. 1983 & JP-A-58 003973, 10 Jan. 1993. English translation.
Patent Abstracts of Japan, vol. 11, No. 304 (E-545) 3 Oct. 1987 & JP-A-62 097 242, 6 May 1987. English translation.
Patent Abstracts of Japan, vol. 14, No. 455, 28 Sep. 1990 & JP-A-2 181 923, 16 Jul. 1990. English translation.
Patent Abstracts of Japan, vol. 13, No. 513, 16 Nov. 1989 & JP-A-1 208 834, 22 Aug. 1989. English translation.
International Publication No. WO 88 09049; International Publication Date: 17 Nov. 1988.
Chemically enhanced focused ion beam etching of deep groves and laser-mirror facets in GaAs under CI.sub.2 gas irradiation using a fine nozzle, Appl. Phys. Lett. 50 (26), 29 Jun. 1987.
Nguyen Nam
Shimadzu Corporation
LandOfFree
Focused ion beam etching apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Focused ion beam etching apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Focused ion beam etching apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2035169