Focused ion beam apparatus and method

Details Focused ion beam apparatus and method Focused ion beam apparatus and method

1994-03-01

1996-11-12

Berman, Jack I.

Radiant energy

Inspection of solids or liquids by charged particles

Positive ion probe or microscope type

25049221, H01J 3730

Patent

active

055742807

ABSTRACT:
A sample semiconductor device which is processed and/or observed with the focused liquid metal ion beam can be returned again to the manufacturing process in this invention. The metal ions used in this apparatus are generally Ga ions. Ga ions contaminate a semiconductor device and a semiconductor manufacturing apparatus by auto-doping. An area which is irradiated with a focused liquid metal ion is doped by the metal ions which are subsequently removed by irradiation with a gas ion beam or covered by hard fusing metal.

REFERENCES:
patent: 4088895 (1978-05-01), Martin
patent: 4638209 (1987-01-01), Asamaki et al.
patent: 4983830 (1991-01-01), Iwasaki
patent: 5083033 (1992-01-01), Komano et al.
patent: 5164596 (1992-11-01), Noguchi et al.

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