Focus rings

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

118723E, 20429802, 20429831, C23C 1650, H05H 100

Patent

active

060398361

ABSTRACT:
An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.

REFERENCES:
patent: 5474649 (1995-12-01), Kava et al.
patent: 5556500 (1996-09-01), Hasegawa et al.
Hongching Shan, et al., "Process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck," Jul. 11, 1995, J. Vac. Sci. Technol. B 14(1), Jan./Feb. 1996, pp. 521-526.
International Searching Authority/EPO, International Search Report, Apr. 15, 1999.

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