Focus ring for semiconductor wafer processing in a plasma reacto

Details Focus ring for semiconductor wafer processing in a plasma reacto Focus ring for semiconductor wafer processing in a plasma reacto

1994-04-05

1997-11-11

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

056859147

ABSTRACT:
In one aspect, the invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a pedestal focus ring surrounding the periphery of the wafer for reducing the process etch rate near the wafer periphery, and plural openings through the pedestal focus ring which permit passage therethrough of particulate contamination, thereby reducing accumulation of particulate contamination near the wafer periphery. In another aspect, in order to reduce corrosive wear of the chamber walls, a removable gas distribution focus ring shields the side walls of the plasma reactor from reactive gases associated with processing of the semiconductor wafer.

REFERENCES:
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 5213658 (1993-05-01), Ishida
patent: 5246532 (1993-09-01), Ishida
patent: 5298465 (1994-03-01), Levy
patent: 5423918 (1995-06-01), Gupta et al.

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