Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-03-07
2006-03-07
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S717000
Reexamination Certificate
active
07009289
ABSTRACT:
A thinned semiconductor die is coupled to an integrated heat spreader with thermal interface material to form a semiconductor package. The method for forming the package comprises forming a metallization layer on a backside of a thinned semiconductor die. A thermal interface portion, including a solder layer including a fluxlessly-capable solder such as AuSn, is formed on a topside of the integrated heat spreader. The metallization layer and the solder layer are then forced together under load and heat without flux to bond the semiconductor die to the integrated heat spreader.
REFERENCES:
patent: 5608267 (1997-03-01), Mahulikar et al.
patent: 6330158 (2001-12-01), Akram
patent: 6471115 (2002-10-01), Ijuin et al.
patent: 6495397 (2002-12-01), Kubota et al.
patent: 6833289 (2004-12-01), Hu et al.
patent: 2004/0099932 (2004-05-01), Elliott et al.
Klink et al., “Innovative Packaging Concepts for Ultra Thin Integrated Circuits,”IEEE 2001 Electronic Components and Technology Conference, 5 pages (2001).
Dodd et al., “Impacts of Substrate Thickness on Single-Event Effects in Integrated Circuits,”IEEE Transactions on Nuclear Science, vol. 48, No. 6, p. 1865-1871 (Dec. 2001).
Sunohara et al., “Development of Wafer Thinning and Double-Sided Bumping Technologies for the Three-Dimensional Stacked LSI,”IEEE 2002 Electronic Components and Technology Conference, p. 238-245 (2002). http://www.webelements.com/webelements/elements/text/Au/enth.html.
Mark Winter, The University of Sheffield, 4 pages (Mar. 6, 2003). “Some Practical Suggestions for Solder Preform Design,”Indium Corporation of America, 1 page (prior to May 12, 2003). “Mechanical Enabling for the Intel® Pentium® 4 Processor in the 478-Pin Package,”Intel Corporation(Oct. 2001).
Hu Chuan
Lu Daoqiang
Intel Corporation
Marger & Johnson & McCollom, P.C.
Owens Douglas W
LandOfFree
Fluxless die-to-heat spreader bonding using thermal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fluxless die-to-heat spreader bonding using thermal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluxless die-to-heat spreader bonding using thermal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3603311