Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-15
2011-03-15
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23021
Reexamination Certificate
active
07906425
ABSTRACT:
A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.
REFERENCES:
patent: 6250540 (2001-06-01), Egitto et al.
Chen Li-Chih
Chen Yen-Ming
Ching Kai-Ming
Jian Yue-Ying
Kuo Wen-Chang
Booth Richard A.
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
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