Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Reexamination Certificate
2005-04-19
2005-04-19
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
C134S019000, C134S022180, C134S031000, C134S902000, C438S905000, C216S058000, C216S063000, C216S079000
Reexamination Certificate
active
06880561
ABSTRACT:
A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6and SF6.
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Goto Haruhiro (Harry)
Harshbarger William R.
Law Kam S.
Shang Quanyuan
Applied Materials Inc.
Kornakov M.
Moser Patterson & Sheridan LLP
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