Coating processes – Direct application of electrical – magnetic – wave – or... – Polymerization of coating utilizing direct application of...
Reexamination Certificate
2006-03-14
2006-03-14
Padgett, Marianne (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Polymerization of coating utilizing direct application of...
C427S535000, C427S536000, C438S788000, C438S789000, C438S780000
Reexamination Certificate
active
07011868
ABSTRACT:
Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR §1.72(b).
REFERENCES:
patent: 3615272 (1971-10-01), Collins et al.
patent: 4636440 (1987-01-01), Jada
patent: 4749631 (1988-06-01), Haluska et al.
patent: 4756977 (1988-07-01), Haluska et al.
patent: 4808653 (1989-02-01), Haluska et al.
patent: 4822697 (1989-04-01), Haluska et al.
patent: 4842888 (1989-06-01), Haluska et al.
patent: 4847162 (1989-07-01), Haluska et al.
patent: 4999397 (1991-03-01), Weiss et al.
patent: 5008320 (1991-04-01), Haluska et al.
patent: 5010159 (1991-04-01), Bank et al.
patent: 5063267 (1991-11-01), Hanneman et al.
patent: 5116637 (1992-05-01), Baney et al.
patent: 5210160 (1993-05-01), Saive et al.
patent: 5234556 (1993-08-01), Oishi et al.
patent: 5262201 (1993-11-01), Chandra et al.
patent: 5290394 (1994-03-01), Sasaki
patent: 5416190 (1995-05-01), Mine et al.
patent: 5523163 (1996-06-01), Balance et al.
patent: 5547703 (1996-08-01), Camilletti et al.
patent: 5618878 (1997-04-01), Syktich et al.
patent: 5853808 (1998-12-01), Arkles et al.
patent: 5879744 (1999-03-01), Cao et al.
patent: 5935646 (1999-08-01), Raman et al.
patent: 5961851 (1999-10-01), Kamarehi et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6080526 (2000-06-01), Yang et al.
patent: 6133137 (2000-10-01), Usami
patent: 6143360 (2000-11-01), Zhong
patent: 6149987 (2000-11-01), Perng et al.
patent: 6184260 (2001-02-01), Zhong
patent: 6231989 (2001-05-01), Chung et al.
patent: 6232424 (2001-05-01), Zhong et al.
patent: 6265320 (2001-07-01), Shi et al.
patent: 6284050 (2001-09-01), Shi et al.
patent: 6313045 (2001-11-01), Zhong et al.
patent: 6346490 (2002-02-01), Catabay et al.
patent: 6359096 (2002-03-01), Zhong et al.
patent: 6576546 (2003-06-01), Gilbert et al.
patent: 6599829 (2003-07-01), Smith et al.
patent: 6620733 (2003-09-01), Ho
patent: 6647994 (2003-11-01), Lui et al.
patent: 6756085 (2004-06-01), Waldfried et al.
patent: 2001/0029283 (2001-10-01), Nakamura et al.
patent: 2001/0046781 (2001-11-01), Nakagawa
patent: 2002/0106500 (2002-08-01), Albano et al.
patent: 2002/0136910 (2002-09-01), Harker
patent: 2004/0253388 (2004-12-01), Kim
patent: 2005/0048795 (2005-03-01), Ko et al.
patent: 2005/0064698 (2005-03-01), Chang et al.
patent: 1037275 (2000-09-01), None
patent: 1189267 (2002-03-01), None
patent: 60-086017 (1985-05-01), None
patent: WO 0170628 (2001-09-01), None
patent: WO 03/025993 (2003-03-01), None
Glasser et al., Effect of the H20/TEOS Ratio Upon The Preparation and Nitridation of Silica Sol/Gel Films, Journal of Non-Crystalline Solids,1984, 13pgs., vol. 63, Elsevier Science Publishers B.V., North-Holland, Amsterdam, no month.
Han Q. et al., “Ultra Low-K Porous Silicon Dioxide Films from A Plasma Process”, Proceedings of the IEEE, International Interconnect Technology Conference, Jun. 4, 2001, pp. 171-173.
Kim J-J et al., “The Effects of Plasma Treatment on Si02 Aerogel Film Using Various Reactive (02, H2, N2) and Non-Reactive (He, Ar) Gases”, Thin Solid Films, Elsevier-Sequoia S.A. Lausanne, CH, vol. 377-378, Dec. 1, 2000, pp. 525-529.
Abstract for JP 59-178749A toTakeda (Fujitsu), Oct. 11, 1984.
Abstract for JP 63-107122A to Fukuyama et al. (Fujitsu) May 12, 1988.
Albano Ralph
Berry, III Ivan L.
Escorcia Orlando
Han Qingyuan
Shiota Atsushi
Axcelis Technologies Inc.
Dinsmore & Shohl LLP
Padgett Marianne
LandOfFree
Fluorine-free plasma curing process for porous low-k materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fluorine-free plasma curing process for porous low-k materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluorine-free plasma curing process for porous low-k materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3603641